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Here we report preliminary results of expixial growth of MnTe/Bi₂Te₃ heterostructures on Si(111).
In depositing Bi₂Te₃ on Si(111), we observe clear RHEED oscillation, indicating layer-by-layer growth. The measured lattice constant of Bi₂Te₃ thin films is around 4.38Å, consistent with theliterature. On the other hand, the RHEED pattern from MnTe layer, which is grown on top of Bi₂Te₃/Si(111), shows a more diffused feature. This suggests that the parameters for growing MnTe need to be further optimized in order to achieve better epitaxial quality. The high-quality MnTe/Bi₂Te₃ ultrathin film heterostructure would constitute an essential system for exploring the complex interplay between altermagnetism and topological insulator in low dimensionality.