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Description
Altermagnetic materials can generate spin-polarized currents for magnetic memory applications while remaining insensitive to external magnetic fields, leading to improved signal stability. MnTe is a representative altermagnetic semiconductor with zero net magnetization and anisotropic band splitting.
In this work, we use scanning tunneling microscopy and spectroscopy (STM/STS) to investigate the atomic structure and electronic properties of MnTe. Cleaved bulk MnTe reveals two distinct surface phases with lattice constants around 440 pm. For thin film growth on Bi₂Te₃, Mn deposition forms hexagonal islands attributed to monolayer MnTe₂, while co-deposition of Mn and Te produces monolayer MnTe with consistent lattice structures.
These results demonstrate atomic-scale characterization of altermagnetic MnTe and provide a foundation for future spin-polarized STM studies of its magnetic structure.